Effect of the top electrode material on the resistive switching of TiO2 thin film

Microelectronic Engineering

Volumn 87, Issue 2, 2010, Pages 98-103

  Kim, Wan Gee ^a   Rhee, Shi Woo ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Resistive RAM; Resistive switching; RRAM; Titanium dioxide

Indexed keywords

LOW CURRENTS; POTENTIAL BARRIER HEIGHT; RESISTIVE RAM; RESISTIVE SWITCHING; SCHOTTKY BARRIERS; TI ELECTRODE; TIO; TOP-ELECTRODE MATERIALS;

CHEMICAL REACTIONS; ELECTROCHEMICAL ELECTRODES; GOLD; OXIDES; PHASE INTERFACES; PLATINUM; RANDOM ACCESS STORAGE; SCHOTTKY BARRIER DIODES; SILVER; SWITCHING; TITANIUM; TITANIUM DIOXIDE; WORK FUNCTION;

SWITCHING SYSTEMS;

EID: 70450250236     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.05.023     Document Type: Article

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