Metal-semiconductor-metal ultraviolet photodetectors based on TiO 2 films deposited by radio-frequency magnetron sputtering

IEEE Electron Device Letters

Volumn 31, Issue 6, 2010, Pages 588-590

  Huang, Huolin ^a   Yang, Weifeng ^a   Xie, Yannan ^a   Chen, Xiaping ^a   Wu, Zhengyun ^a  

^a XIAMEN UNIVERSITY   (China)

Author keywords

Dark current; Gain mechanism; Photodetectors (PDs); Radio frequency magnetron sputtering; TiO2

Indexed keywords

AU ELECTRODES; CUTOFF WAVELENGTHS; GAIN MECHANISM; HIGH BREAKDOWN VOLTAGE; HIGH QUALITY; METAL SEMICONDUCTOR METAL; RADIO-FREQUENCY-MAGNETRON SPUTTERING; REJECTION RATIOS; RESPONSIVITY; THREE ORDERS OF MAGNITUDE; TIO; TIO2; ULTRA-VIOLET; ULTRA-VIOLET PHOTODETECTORS; UV DETECTION;

HETEROJUNCTION BIPOLAR TRANSISTORS; OPTOELECTRONIC DEVICES; PHOTODETECTORS;

MAGNETRON SPUTTERING;

EID: 77953019772     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2045876     Document Type: Article

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