Resistive switching memory devices composed of binary transition metal oxides using sol-gel chemistry

Langmuir

Volumn 25, Issue 8, 2009, Pages 4274-4278

  Lee, Chanwoo ^a   Kim, Inpyo ^a   Choi, Wonsup ^a   Shin, Hyunjung ^a   Cho, Jinhan ^a  

^a Kookmin University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AG ELECTRODES; CYCLING TESTS; DEVICE FABRICATIONS; ELECTRICAL PROPERTIES; LOW OPERATING VOLTAGES; NEW OPPORTUNITIES; NIOBIUM OXIDES; RESISTIVE SWITCHING MEMORIES; RETENTION TIME; SILICON SUBSTRATES; SOL-GEL CHEMISTRIES; SOLUTION-PROCESSING; SWITCHING PHENOMENON; SWITCHING SPEED; THERMAL-ANNEALING; TITANIUM ISOPROPOXIDE; TRANSITION METAL-OXIDES; UNIPOLAR SWITCHING; VOLTAGE POLARITIES;

DATA STORAGE EQUIPMENT; ELECTRIC PROPERTIES; GELATION; GELS; NIOBIUM; OXIDES; PLATINUM; SILVER; SOL-GELS; SOLS; SWITCHING; SWITCHING SYSTEMS; TITANIUM; TRANSITION METAL COMPOUNDS;

SOL-GEL PROCESS;

EID: 65249091964     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la804267n     Document Type: Article

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