Memristor structures for high scalability: Non-linear and symmetric devices utilizing fabrication friendly materials and processes

Microelectronic Engineering

Volumn 103, Issue , 2013, Pages 66-69

  Nickel, Janice H ^a   Strachan, John Paul ^a   Pickett, Matthew D ^a   Schamp, C Tom ^b   Yang, J Joshua ^a   Graham, John A ^c   Williams, R Stanley ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b SVTC Technologies   (United States)

^c Graham Technology Consulting LLC   (United States)

Author keywords

Crossbar; Fabrication; Memory; Memristor

Indexed keywords

CHARACTERIZATION; DATA STORAGE EQUIPMENT; FABRICATION; LEAKAGE CURRENTS; MEMRISTORS; PASSIVE FILTERS; SCALABILITY;

BACK-END-OF-LINE MATERIALS; CROSS-BAR STRUCTURES; CROSSBAR; ELECTRICAL CHARACTERISTIC; ELECTRICAL CHARACTERIZATION; MATERIALS AND PROCESS; MEMRISTOR; ORIGINAL STRUCTURES;

FAILURE ANALYSIS;

EID: 84869884786     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2012.09.007     Document Type: Article

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