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Volumn 110, Issue 7, 2011, Pages

A solution processed nonvolatile resistive memory device with Ti/CdSe quantum dot/Ti-TiOx/CdSe quantum dot/indium tin-oxide structure

(2) Kannan, V a Rhee, J K a

a Dongguk University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT ATMOSPHERE; COULOMB BLOCKADE EFFECTS; MEMORY DEVICE; METAL-OXIDE; NEGATIVE DIFFERENTIAL RESISTANCES; NON-VOLATILE; ON/OFF RATIO; OPERATING MECHANISM; RETENTION CHARACTERISTICS; ROOM TEMPERATURE; SOLUTION-PROCESSED; SWITCHING OPERATIONS; TRAPPED CHARGE;

TIN;

EID: 80054980235 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3644973 Document Type: Article

Times cited : (21)

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