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Volumn 86, Issue 11, 2009, Pages 2153-2156

Effect of post annealing on the resistive switching of TiO2 thin film

Author keywords

ReRAM; Resistive switching; TiO2

Indexed keywords

BOTTOM ELECTRODES; ELECTRON TRANSFER PROCESS; GRAIN SIZE; MAGNETRON SPUTTERING SYSTEMS; POST ANNEALING; POTENTIAL BARRIER HEIGHT; RERAM; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; TIO; TIO2;

EID: 69549103351     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.02.028     Document Type: Article
Times cited : (35)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.