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Volumn 86, Issue 11, 2009, Pages 2153-2156
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Effect of post annealing on the resistive switching of TiO2 thin film
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Author keywords
ReRAM; Resistive switching; TiO2
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Indexed keywords
BOTTOM ELECTRODES;
ELECTRON TRANSFER PROCESS;
GRAIN SIZE;
MAGNETRON SPUTTERING SYSTEMS;
POST ANNEALING;
POTENTIAL BARRIER HEIGHT;
RERAM;
RESISTIVE SWITCHING;
RESISTIVE SWITCHING BEHAVIORS;
TIO;
TIO2;
ANNEALING;
PLATINUM;
SILVER;
SWITCHING SYSTEMS;
THIN FILM DEVICES;
THIN FILMS;
SWITCHING;
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EID: 69549103351
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2009.02.028 Document Type: Article |
Times cited : (35)
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References (16)
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