Resistive switching characteristics of ultra-thin TiOx

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1136-1139

  Park, Jubong ^a   Jung, Seungjae ^a   Lee, Joonmyoung ^a   Lee, Wootae ^a   Kim, Seonghyun ^a   Shin, Jungho ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

ReRAM; RRAM; Schottky barrier; TiOx; Ultra thin

Indexed keywords

RERAM; RRAM; SCHOTTKY BARRIER; TIO; ULTRA-THIN;

DEPTH PROFILING; IRIDIUM; OXYGEN VACANCIES; PHOTOELECTRON SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SWITCHING SYSTEMS; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

SWITCHING;

EID: 79958033522     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.050     Document Type: Conference Paper

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