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Journal of the Electrochemical Society

Volumn 158, Issue 3, 2011, Pages

Improvement in resistance switching and retention properties of Pt/Ti O2 Schottky junction devices

(5) Hirose, Sakyo a Nakayama, Akinori a Niimi, Hideaki a Kageyama, Keisuke a Takagi, Hiroshi a

a MURATA MANUFACTURING CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CO IONS; CO-DOPED; ELECTRODE INTERFACE; LOW-RESISTANCE STATE; RESISTANCE SWITCHING; RETENTION PROPERTIES; SCHOTTKY JUNCTIONS; TUNNELING PATHS;

COBALT; CURRENT VOLTAGE CHARACTERISTICS; DISTILLATION; DOPING (ADDITIVES); OXYGEN; OXYGEN VACANCIES; PLATINUM ALLOYS; SWITCHING; TITANIUM DIOXIDE;

EQUIPMENT;

EID: 79551595957 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3529247 Document Type: Article

Times cited : (14)

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