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Current Applied Physics

Volumn 11, Issue 2 SUPPL., 2011, Pages

Dependence of resistive switching behaviors on oxygen content of the Pt/TiO2-x/Pt matrix

(5) Bae, Yoon Cheol a Lee, Ah Rahm a Kwak, June Sik a Im, Hyunsik b Hong, Jin Pyo a

a Hanyang University (South Korea)

b Dongguk University (South Korea)

Author keywords

Nonvolatile memory; ReRAM; Resistive switching

Indexed keywords

CURRENT LEVELS; EXPERIMENTAL OBSERVATION; IMPEDANCE SPECTROSCOPY; MATRIX; NON-VOLATILE MEMORIES; OXYGEN CONTENT; PT ELECTRODE; RERAM; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RUTHERFORD BACK-SCATTERING SPECTROMETRY; RUTILE TIO; TIO;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; DIELECTRIC MATERIALS; OXIDE MINERALS; OXYGEN; PLATINUM; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SWITCHING SYSTEMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SWITCHING;

EID: 79960927022 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2010.11.125 Document Type: Article

Times cited : (23)

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