Reproducible resistive switching in hydrothermal processed TiO2 nanorod film for non-volatile memory applications

Sensors and Actuators, A: Physical

Volumn 194, Issue , 2013, Pages 135-139

  Senthilkumar, V ^a   Kathalingam, A ^a   Kannan, V ^a   Senthil, Karuppanan ^b   Rhee, Jin Koo ^a  

^a Dongguk University   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

Electrical properties; Hydrothermal; Nanorods; Resistive memory; Structural properties; Titanium oxide

Indexed keywords

COMPOSITIONAL STUDIES; HYDROTHERMAL; HYDROTHERMAL PROCESS; NON-VOLATILE MEMORY APPLICATION; OXIDATION/REDUCTION; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE MEMORY; SWITCHING PROPERTIES;

DATA STORAGE EQUIPMENT; ELECTRIC PROPERTIES; NANORODS; RANDOM ACCESS STORAGE; STRUCTURAL PROPERTIES; SWITCHING SYSTEMS; TITANIUM OXIDES;

TITANIUM DIOXIDE;

EID: 84874841092     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2013.02.009     Document Type: Article

References (24)

1. A. Sawa Resistive switching in transition metal oxides Materials Today 11 6 2008 28 36 (Pubitemid 351680723)
2. 2 nanocrosspoint junctions Applied Physics Letters 96 2010 122902-3
3. R. Waser, and M. Aono Nanoionics-based resistive switching memories Nature Materials 6 2007 833 840 (Pubitemid 350064191)
4. G.I. Meijer Who wins the nonvolatile memory race? Science 319 2008 1625 1626
5. R. Waser, R. Dittmann, G. Staikov, and K. Szot Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges Advanced Materials 21 2009 2632 2663
6. 2:Cu/Pt Applied Physics Letters 93 2008 223506-3
7. 2/Pt oxide diode Applied Physics Letters 96 2010 26290-3
8. 2/ITO memory device Microelectronic Engineering 98 2012 97 101
9. 2O metal-insulator-metal resistive memory Applied Physics Letters 91 2007 123517-3
10. G. Buh, I. Hwang, and B.H. Park Time-dependent electroforming in NiO resistive switching devices Applied Physics Letters 95 2009 142101-3
11. C.M. Lieber Nanoscale science and technology: building a big future from small things MRS Bulletin 28 2003 486 491
12. W. Lu, and C.M. Lieber Nanoelectronics from the bottom up Nature Materials 6 2007 841 850 (Pubitemid 350050579)
13. Y. Cui, and C.M. Lieber Functional nanoscale electronic devices assembled using silicon nanowire building blocks Science 291 2001 851 853 (Pubitemid 32120751)
14. 12 nanorods ACS Applied Materials and Interfaces 3 2011 500 504
15. W.-Y. Chang, C.-A. Lin, J.-H. He, and T.-B. Wu Resistive switching behaviors of ZnO nanorod layers Applied Physics Letters 96 2010 242109-3
16. K. Oka, T. Yanagida, K. Nagashima, H. Tanaka, and T. Kawai Nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires Journal of the American Chemical Society 131 2009 3434 3435
17. 2 nanorod arrays for nonvolatile memory Electrochemical and Solid-State Letters 14 10 2011 H422 H425
18. 2 nanocrystals in ionic liquid via a microwave-assisted process Journal of the American Chemical Society 129 2007 6362 6363 (Pubitemid 46799319)
19. A.N. Josea, J.T. Juan, D. Pablo, R.P. Javier, R. Diana, and I.L. Marta Iron-doped titania powders prepared by a sol-gel method. Part II: photocatalytic properties Applied Catalysis A 178- 1999 191 203
20. 2 nanocrystals Applied Physics Letters 72 1 1998 73 75 (Pubitemid 128671204)
21. 2/W devices for cross-point application Current Applied Physics 11 2011 S102 S106
22. 2 memory films based on the interface layer formed by using Ti top electrode Journal of Applied Physics 102 2007 094101-5
23. 3 thin films with W top electrode Applied Physics Letters 93 2008 222102-3
24. S.R. Mohapatra, T. Tsuruoka, T. Hasegawa, K. Terabe, and M. Aono Flexible resistive switching memory using inkjet printing of a solid polymer electrolyte AIP Advances 2 2012 022144-7