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Journal of Applied Physics

Volumn 113, Issue 3, 2013, Pages

Role of oxygen vacancies in TiO2-based resistive switches

(1) Gu, Tingkun a

a SHANDONG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STATE; CONDUCTING FILAMENT; DEFECT STATE; EFFECT OF OXYGEN; EXTENDED DEFECT; FIRST PRINCIPLES METHOD; METALLIC FILAMENTS; NEUTRAL OXYGEN VACANCY; PT ELECTRODE; RESISTIVE SWITCHING; TIO; VALENCE STATE;

DEFECTS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; PLATINUM; TITANIUM DIOXIDE;

OXYGEN VACANCIES;

EID: 84872860550 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4779767 Document Type: Article

Times cited : (34)

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