Effect of firing atmosphere and bottom electrode on resistive switching mode in TiO2 thin films

Thin Solid Films

Volumn 529, Issue , 2013, Pages 430-434

  Lai, Chun Hung ^a   Liu, Chih Yi ^b   Hsu, Cheng Hsing ^a   Lee, Yi Mu ^a   Lin, Jenn Sen ^a   Yang, Hsiwen ^a  

^a NATIONAL UNITED UNIVERSITY   (Taiwan)

^b NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

Author keywords

Resistive switching; Sol gel; Space charge limited; TiO2

Indexed keywords

ALTERNATIVE PROCEDURES; AMBIENT OXYGEN; BOTTOM ELECTRODES; CONDUCTION MECHANISM; CURRENT-VOLTAGE MEASUREMENTS; DIRECTION-INDEPENDENT; FILAMENT RUPTURES; HIGH ELECTRIC FIELDS; INDIUM TIN OXIDE; ON STATE CURRENT; PROCESSING FLOW; REDUCTION/OXIDATION; RESISTIVE SWITCHING; SPACE-CHARGE-LIMITED; SWITCHING MODES; TEMPERATURE DEPENDENT; TIO; TURN OFFS; TURN-ON VOLTAGES;

ELECTRIC FIELDS; ELECTROCHEMICAL OXIDATION; OXYGEN; SOL-GEL PROCESS; SOL-GELS; TIN OXIDES; TITANIUM DIOXIDE;

SWITCHING SYSTEMS;

EID: 84873725771     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.09.025     Document Type: Conference Paper

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