Self-aligned memristor cross-point arrays fabricated with one nanoimprint lithography step

Nano Letters

Volumn 10, Issue 8, 2010, Pages 2909-2914

  Xia, Qiangfei ^a   Yang, J Joshua ^a   Wu, Wei ^a   Li, Xuema ^a   Williams, R Stanley ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

crossbar; memristive device; Memristor; nanoimprint lithography; nonvolatile memory; resistive memory

Indexed keywords

BOTTOM ELECTRODES; CHEMICAL CONTROLS; CRITICAL INTERFACES; CROSS-POINT ARRAY; CROSSBAR; FABRICATED ARRAYS; JUNCTION AREA; MEMRISTOR; NANOIMPRINT LITHOGRAPHY PROCESS; NON-VOLATILE MEMORIES; ONE STEP; OVERLAY ALIGNMENT; SELF-ALIGNED; TIO;

FABRICATION;

NANOIMPRINT LITHOGRAPHY;

EID: 77955583956     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl1017157     Document Type: Article

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