Overview on the resistive switching in TiO2 solid electrolyte

Integrated Ferroelectrics

Volumn 124, Issue 1, 2011, Pages 87-96

  Jeong, Doo Seok ^a   Thomas, Reji ^b   Katiyar, R S ^b   Scott, J F ^c  

^a Korea Institute of Science and Technology   (South Korea)

^b UNIVERSITY OF PUERTO RICO   (Puerto Rico)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT STATUS; NON-VOLATILE MEMORIES; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SEMICONDUCTOR MEMORY; SEMICONDUCTOR MEMORY TECHNOLOGY; THIN FILM MATERIAL; TIO; TRANSITION-METAL OXIDES;

SEMICONDUCTOR DEVICES; SEMICONDUCTOR STORAGE; SOLID ELECTROLYTES; SWITCHING; SWITCHING SYSTEMS; TITANIUM DIOXIDE; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

RANDOM ACCESS STORAGE;

EID: 79961186125     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584587.2011.573726     Document Type: Conference Paper

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