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Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 791-809

Materials, technologies, and circuit concepts for nanocrossbar-based bipolar RRAM

(5) Kügeler, Carsten a,b,c Rosezin, Roland a,b Linn, Eike b,d Bruchhaus, Rainer a,b Waser, Rainer a,b,d

a FORSCHUNGSZENTRUM JÜLICH (Germany)

b JARA Fundamentals of Future Information Technology (Germany)

c FRAUNHOFER INSTITUTE FOR MANUFACTURING TECHNOLOGY AND ADVANCED MATERIALS IFAM (Germany)

d RWTH AACHEN UNIVERSITY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

3D STACKING; CROSSBAR ARRAYS; FEATURE SIZES; MEMORY DENSITY; MEMORY OPERATIONS; MEMORY SIZE; NANOJUNCTIONS; OPERATION SCHEMES; RESISTIVE SWITCHING; SIGNIFICANT IMPACTS; SWITCHING SPEED; TIO; VALENCE CHANGE;

CHARACTERIZATION; CIRCUIT THEORY; ELECTROCHEMICAL PROPERTIES; PLATINUM; RANDOM ACCESS STORAGE; SILICON COMPOUNDS; SWITCHING; SWITCHING SYSTEMS; TITANIUM DIOXIDE;

MATERIALS PROPERTIES;

EID: 79959331828 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-011-6287-2 Document Type: Article

Times cited : (56)

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