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Applied Physics Letters

Volumn 95, Issue 20, 2009, Pages

Enhanced nonvolatile resistive switching in dilutely cobalt doped TiO 2

(5) Bogle, Kashinath A a Bachhav, Mukesh N a Deo, Meenal S a Valanoor, Nagarajan b Ogale, Satishchandra B a

a NATIONAL CHEMICAL LABORATORY (India)

b UNIVERSITY OF NEW SOUTH WALES (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DILUTE CONCENTRATIONS; DOPED-TIO; FILAMENTARY TRACKS; LOCAL CHARGE; NON-VOLATILE; RESISTIVE SWITCHING; ROOM TEMPERATURE; VACANCY DEFECTS; VALENCE STATE;

COBALT; OXYGEN; OXYGEN VACANCIES; SWITCHING SYSTEMS; VACANCIES;

DOPING (ADDITIVES);

EID: 70450245375 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3263713 Document Type: Article

Times cited : (62)

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