Highly repeatable multilevel resistive switching characteristics of an Au/TiO2/Ti memory device

Semiconductor Science and Technology

Volumn 28, Issue 12, 2013, Pages

  Acharyya, D ^a   Hazra, A ^a   Dutta, K ^a   Gupta, R K ^b   Bhattacharyya, P ^a  

^a INDIAN INSTITUTE OF ENGINEERING SCIENCE AND TECHNOLOGY   (India)

^b BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE STABILITY; LOW-RESISTANCE STATE; MULTILEVEL RESISTIVE SWITCHING; OPERATING TEMPERATURE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SWITCHING PHENOMENON; VOLTAGE REQUIREMENT;

ELECTRIC FIELDS; FILM THICKNESS; OXIDE MINERALS;

SWITCHING SYSTEMS;

EID: 84888580622     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/12/125001     Document Type: Article

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