Controlling the composition of doped materials by ALD: A case study for Al-doped TiO2 films

Electrochemical and Solid-State Letters

Volumn 11, Issue 7, 2008, Pages

  Kim, Seong Keun ^a,c   Choi, Gyu Jin ^a   Hwang, Cheol Seong ^a,b  

^a Seoul National University   (South Korea)

^b ELECTROCHEMICAL SOCIETY

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CHEMISORPTION; DOPING (ADDITIVES); FILM GROWTH; FILM THICKNESS; PASSIVATION; PERMITTIVITY; TITANIUM DIOXIDE;

DOPED FILMS; DOPED MATERIALS; PASSIVATION EFFECT; PRECURSOR CYCLE RATIO;

THIN FILMS;

EID: 43949140875     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2909768     Document Type: Article

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