Effects of aluminum layer and oxidation on TiO2 based bipolar resistive random access memory (RRAM)

2010 Silicon Nanoelectronics Workshop, SNW 2010

Volumn , Issue , 2010, Pages

  Oh, Jeong Hoon ^a   Ryoo, Kyung Chang ^a   Jung, Sunghun ^a   Seok Oh, Kyung ^b   Shin, Hyungcheol ^a   Park, Byung Gook ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT RATIOS; HIGH CURRENTS; PLASMA OXIDATION; RESISTANCE RATIO; RESISTIVE RANDOM ACCESS MEMORY; TIO;

IRIDIUM; NANOELECTRONICS; OXYGEN; OXYGEN VACANCIES; RANDOM ACCESS STORAGE;

OXIDATION;

EID: 77957990888     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SNW.2010.5562545     Document Type: Conference Paper

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