Resistive programmable through-silicon vias for reconfigurable 3-D fabrics

IEEE Transactions on Nanotechnology

Volumn 11, Issue 1, 2012, Pages 8-11

  Sacchetto, Davide ^a   Zervas, Michael ^a   Temiz, Yuksel ^a   De Micheli, Giovanni ^a   Leblebici, Yusuf ^a  

^a EPFL   (Switzerland)

Author keywords

3 D integration; Memristive systems; memristor; resistive RAM (ReRAM); through silicon via (TSV); titanium dioxide rm (TiO 2)

Indexed keywords

3-D INTEGRATION; MEMRISTOR; RESISTIVE RAM (RERAM); THROUGH-SILICON VIA (TSV); TIO;

OXIDES; PLATINUM; RANDOM ACCESS STORAGE; THREE DIMENSIONAL; TITANIUM; TITANIUM DIOXIDE;

ELECTRONICS PACKAGING;

EID: 84855683107     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2011.2160557     Document Type: Article

References (10)

1. [Online]. Available: http://www.itrs.net
2. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found," Nature, 2008.
3. J. E. Green, J. Wook Choi, A. Boukai, Y. Bunimovich, E. Johnston-Halperin, E.Deionno,Y. Luo, B. A. Sheriff, K. Xu,Y. Shik Shin, H. Tseng, J. F. Stoddart, and J. R. Heath, "A160-kilobitmolecular electronicmemory patterned at 1011 bits per square centimetre," Nature, vol. 445, pp. 414-417, Jan. 2007. (Pubitemid 46160906)
4. L. Chua, "Memristor-The missing circuit element," IEEE Trans Circuit Theory, vol. 18, no. 5, pp. 507-519, Sep. 1971.
5. L. Chua and S.M. Kang, "Memristive devices and systems," Proc. IEEE, vol. 64, no. 2, pp. 209-223, Feb. 1976.
6. J. Borghetti, G. S. Snider, P. J. Kuekes, J. J. Yang, D. R. Stewart, and R. S. Williams, "'Memristive' switches enable 'stateful' logic operations via material implication," Nature, vol. 464, pp. 873-876, Apr. 2010.
7. J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S.Williams, "Memristive switchingmechanism for metal//oxide//metal nanodevices," Nat. Nano, vol. 3, no. 7, pp. 429-433, Jul. 2008.
8. U. Diebold, "The surface science of titanium dioxide," Surf. Sci. Rep., vol. 48, no. 5-8, pp. 53-229, 2003.
9. 2-based resistive memory devices," Adv. Funct. Mater., vol. 20, no. 22, pp. 3912-3917, 2010.
10. 2 thin film," Microelectron. Eng., vol. 87, no. 2, pp. 98-103, 2010.