HfOx/TiOx/HfOx/TiOx multilayer-based forming-free RRAM devices with excellent uniformity

IEEE Electron Device Letters

Volumn 32, Issue 4, 2011, Pages 566-568

  Fang, Z ^a,b   Yu, H Y ^a,b   Li, X ^a   Singh, N ^a   Lo, G Q ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

HfOx; resistive random accessmemory (RRAM); uniformity

Indexed keywords

CIRCUIT OPERATION; DEVICE PARAMETERS; FORMING PROCESS; HFOX; RESET VOLTAGE; RESISTANCE DISTRIBUTION; RESISTIVE RANDOM ACCESSMEMORY (RRAM); RESISTIVE SWITCHING; SET VOLTAGE; SINGLE LAYER DEVICES; TI DOPING EFFECT; TIO; UNIFORMITY;

HAFNIUM COMPOUNDS; MULTILAYERS;

EQUIPMENT;

EID: 79953059793     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2109033     Document Type: Article

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