Challenges and opportunities for future non-volatile memory technology

Current Applied Physics

Volumn 11, Issue 2 SUPPL., 2011, Pages

  Nishi, Yoshio ^a  

^a Stanford University   (United States)

Author keywords

ab initio modeling; CBRAM; Nonvolatile memory; ReDox; RERAM; RRAM

Indexed keywords

AB-INITIO MODELING; CBRAM; NON-VOLATILE MEMORIES; REDOX; RERAM; RRAM;

KNOWLEDGE BASED SYSTEMS; MATERIALS; ORGANIC CARBON; PEROVSKITE; RANDOM ACCESS STORAGE; SEMICONDUCTOR STORAGE;

PHASE CHANGE MEMORY;

EID: 79960926644     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.01.022     Document Type: Article

References (17)

1. C.Y. Lu, and H. Kuan IEEE Nanotechnology Magazine 1 2009 4
2. C. Villa, et al., ISSCC Digest of Technical Papers (2010) p. 270.
3. S.Q. Liu Applied Physics Letters 76 2000 2749
4. A. Baikalov Applied Physics Letters 83 2003 957
5. S. Tsui Applied Physics Letters 85 2004 317
6. S. Duhalde Physica B 354 2004 11
7. A. Beck Applied Physics Letters 77 2000 139
8. Y. Watanabe Applied Physics Letters 78 2001 3738
9. J.F. Gibbons, and W.E. Beadle Solid State Electronics 7 1964 785
10. D.C. Bullock, and D.J. Epstein Applied Physics Letters 17 1970 199
11. S. Seo Applied Physics Letters 85 2004 5655
12. S. Seo Applied Physics Letters 86 2005
13. T. Sakamoto Applied Physics Letters 82 2003 3032
14. R. Waser, and M. Aono Nature Materials 6 2007 833
15. S.-G. Park Physical Review B 81 2010 115109
16. H.D. Lee Physical Review B 81 2010 193202
17. D.-H. Kwon Nature Nanotechnology 5 2010 148