Bipolar nonlinear Ni/TiO2/Ni selector for 1S1R crossbar array applications

IEEE Electron Device Letters

Volumn 32, Issue 10, 2011, Pages 1427-1429

  Huang, Jiun Jia ^a   Tseng, Yi Ming ^a   Hsu, Chung Wei ^a   Hou, Tuo Hung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

4F2; Crossbar array; resistance random access memory; resistive switching; sneak current

Indexed keywords

4F2; ARRAY SIZES; CELL STRUCTURE; CROSSBAR ARRAYS; HIGH-DENSITY; HIGHLY NONLINEAR; MEMORY DEVICE; METAL-INSULATOR-METAL STRUCTURES; READ MARGIN; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SCHOTTKY EMISSIONS; SERIES CONNECTIONS;

HAFNIUM OXIDES; METAL INSULATOR BOUNDARIES; RANDOM ACCESS STORAGE; SWITCHING SYSTEMS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 80053565784     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2161601     Document Type: Article

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