Titanium dioxide thin films for next-generation memory devices

Journal of Materials Research

Volumn 28, Issue 3, 2013, Pages 313-325

  Kim, Seong Keun ^a   Kim, Kyung Min ^b   Jeong, Doo Seok ^a   Jeon, Woojin ^c,d   Yoon, Kyung Jean ^c,d   Hwang, Cheol Seong ^c,d  

^a Korea Institute of Science and Technology   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Seoul National University   (South Korea)

^d Seoul National University   (South Korea)

Author keywords

High r material; Resistance switching; TiO2

Indexed keywords

CAPACITOR DIELECTRICS; CONDUCTING CHANNELS; CONFORMALITY; CRYSTALLOGRAPHIC PLANE; DIELECTRIC LAYER; DOPED-TIO; DYNAMIC RANDOM ACCESS MEMORY; ELECTRICAL PERFORMANCE; ELECTRICAL STIMULI; FABRICATION PROCESS; INTEGRATION ISSUES; MATERIAL PROPERTY; OXYGEN IONS; PHASE MATERIALS; RESISTANCE SWITCHING; RUTILE STRUCTURE; SMALL FEATURES; SYNTHESIS METHOD; TIO; TITANIUM DIOXIDE THIN FILM;

ATOMIC LAYER DEPOSITION; CAPACITORS; DYNAMIC RANDOM ACCESS STORAGE; FILM GROWTH; MATERIALS; OXIDE MINERALS; STRONTIUM COMPOUNDS; THIN FILMS;

TITANIUM DIOXIDE;

EID: 84873293107     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2012.231     Document Type: Review

References (63)

1. H. Tanaka, M. Kido, K. Yahashi, M. Oomura, R. Katsumata, M. Kito, Y. Fukuzumi, M. Sato, Y. Nagata, Y. Matsuoka, Y. Iwata, H. Aochi, and A. Nitayama: Bit-cost scalable technology with punch and plug process for ultrahigh density flash memory. VLSI Symp. Tech. Dig. 14 (2007).
2. G.D. Wilk, R.M. Wallace, and J.M. Anthony: High-j gate dielectrics: Current status and materials properties considerations. J. Appl. Phys. 89, 5243 (2001).
3. A. Sawa: Resistive switching in transition metal oxides. Mater. Today 11(6), 28 (2008).
4. R. Waser, R. Dittmann, G. Staikov, and K. Szot: Redox-based resistive switching memories - Nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632 (2009).
5. 2 thin films grown by atomic layer deposition. J. Appl. Phys. 98, 033715 (2005).
6. 2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching. Appl. Phys. Lett. 89, 223509 (2006).
7. 2 films. Appl. Phys. Lett. 90, 113501 (2007).
8. M-J. Lee, S. Seo, D-C. Kim, S-E. Ahn, D.H. Seo, I-K. Yoo, I-G. Baek, D-S. Kim, I-S. Byun, S-H. Kim, I-R. Hwang, J-S. Kim, S-H. Jeon, and B.H. Park: A low-temperature-grown oxide diode as a new switch element for high-density, nonvolatile memories. Adv. Mater. 19, 73 (2007).
9. I.G. Baek, C.J. Park, H. Ju, D.J. Seong, H.S. Ahn, J.H. Kim, M.K. Yang, S.H. Song, E.M. Kim, S.O. Park, C.H. Park, C.W. Song, G.T. Jeong, S. Choi, H.K. Kang, and C. Chung: Realization of vertical resistive memory (VRRAM) using cost effective 3D process. IEEE Int. Electron Devices Meeting 31.8.1 (2011).
10. 2 interfaces for memristive switches. Appl. Phys. A 102, 785 (2011).
11. 2). J. Phys. Chem. Solids 23, 1579 (1962).
12. U. Balachandran and N.G. Eror: Electrical conductivity in nonstoichiometric titanium dioxide at elevated temperatures. J. Mater. Sci. 23, 2676 (1988).
13. 2-x, between 800 and 1100 C. J. Phys. Chem. Solids 42, 363 (1981).
14. 2-x using molecular dynamics. Solid State Ionics 101-103(Part 1), 333 (1997).
15. 2 at high temperature by means of electrical resistivity. J. Solid State Chem. 20, 43 (1977).
16. R.R. Hasiguti: The structure of defects in solids. Ann. Rev. Mater. Sci. 2, 69 (1972).
17. P.O. Andersson, E.L. Kollberg, and A. Jelenski: Charge compensation in iron-doped rutile. J. Phys. C: Solid State Phys. 7, 1868 (1974).
18. M.D. Banus and T.B. Reed: The Chemistry of Extended Defects in Nonmetallic Solids (North-Holland, Amsterdam, 1970).
19. L.A. Bursill and B.G. Hyde: Crystallographic shear in the higher titanium oxides: Structure, texture, mechanisms and thermodynamics. Prog. Solid State Chem. 7, 177 (1972).
20. 2/Pt resistive switching cell. Phys. Rev. B 79, 195317 (2009).
21. 2 thin film by hourglassshaped Magnéli filaments. Appl. Phys. Lett. 98, 262901 (2011).
22. 2 resistive switching memory. Nat. Nanotechnol. 5, 148 (2010).
23. J.P. Strachan, M.D. Pickett, J.J. Yang, S. Aloni, A.L. David Kilcoyne, G. Medeiros-Ribeiro, and R.S. Williams: Direct identification of the conducting channels in a functioning memristive device. Adv. Mater. 22, 3573 (2010).
24. S.K. Kim, S.W. Lee, J.H. Han, B. Lee, S. Han, and C.S. Hwang: Capacitors with an equivalent oxide thickness of, 0.5 nm for nanoscale electronic semiconductor memory. Adv. Funct. Mater. 20, 2989 (2010).
25. 2 thin films using the semiconducting In- Ga-Zn-O electrode. IEEE Electron Device Lett. 33, 582 (2012).
26. M. Leskelä and M. Ritala: Atomic layer deposition chemistry: Recent developments and future challenges. Angew. Chem. Int. Ed. 42, 5548 (2003).
27. T. Suntola: Atomic layer epitaxy. Mater. Sci. Rep. 4, 261 (1989).
28. M. Leskelä and M. Ritala: Atomic layer deposition (ALD): From precursors to thin film structures. Thin Solid Films 409, 138 (2002).
29. K.H. Kuesters, M.F. Beug, U. Schroeder, N. Nagel, U. Bewersdorff, G. Dallmann, S. Jakschik, R. Knoefler, S. Kudelka, C. Ludwig, D. Manger, W. Mueller, and A. Tilke: New materials in memory development sub 50 nm: Trends in Flash and DRAM. Adv. Eng. Mater. 11, 241 (2009).
30. R.G. Gordon, D. Hausmann, E. Kim, and J. Shepard: A kinetic model for step coverage by atomic layer deposition in narrow holes or trenches. Chem. Vap. Deposition 9, 73 (2003).
31. 2 thin films on a Ru electrode in threedimensional contact holes using atomic layer deposition. Electrochem. Solid-State Lett. 8(12), F59 (2005).
32. 2 thin films on Ru and Si electrodes for memory capacitor applications. J. Electrochem. Soc. 152(8), C552 (2005).
33. 2 thin films by UV irradiation. Electrochem. Solid-State Lett. 14(4), H146 (2011).
34. 2 thin films with a smooth morphology from Ti(O-i-Pr)2(DPM)2. J. Electrochem. Soc. 156(8), D296 (2009).
35. J. Aarik, A. Aidla, H. Mändar, and T. Uustare: Atomic layer deposition of titanium dioxide from TiCl4 and H2O: Investigation of growth mechanism. Appl. Surf. Sci. 172, 148 (2001).
36. U. Diebold: The surface science of titanium dioxide. Surf. Sci. Rep. 48, 53 (2003).
37. 2 rutile. Phys. Rev. B 50, 13379 (1994).
38. 2 thin films from TiI4 and H2O. Appl. Surf. Sci. 193, 277 (2002).
39. M. Schuisky, J. Aarik, K. Kukli, A. Aidla, and A. Hårsta: Atomic layer deposition of thin films using O2 as oxygen source. Langmuir 17, 5508 (2001).
40. 2 thin films on a Ru electrode grown at 250 °C by atomic layer deposition. Appl. Phys. Lett. 85(18), 4112 (2004).
41. 3 pretreatment. Electrochem. Solid-State Lett. 9(1), F5 (2006).
42. 2 films grown by atomic layer deposition for memory capacitor applications. J. Appl. Phys. 102, 024109 (2007).
43. M.L. Green, M.E. Gross, L.E. Papa, K.L. Schnoes, and D. Brasen: Chemical vapor deposition of ruthenium and ruthenium dioxide films. J. Electrochem. Soc. 132, 2677 (1985).
44. J.H. Han, S. Han, W. Lee, S.W. Lee, S.K. Kim, J. Gatineau, C. Dussarrat, and C.S. Hwang: Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode. Appl. Phys. Lett. 99, 022901 (2011).
45. 2 rutile films on RuO2 electrodes. J. Vac. Sci. Technol., B 27, 266 (2009).
46. 2 films on Ir substrates for ultralow leakage currents. Phys. Status Solidi RRL 5, 262 (2011).
47. 2 films with ultralow leakage currents for next generation DRAM capacitors. Adv. Mater. 20, 1429 (2008).
48. 2 interlayer. Chem. Mater. 22, 4419 (2010).
49. 2 thin films by adopting ultrathin HfO2 films for memory application. J. Appl. Phys. 110, 024105 (2011).
50. 3 thin films with Pt or conducting oxide electrodes. J. Appl. Phys. 92, 432 (2002).
51. C.T. Black and J.J. Welser: Electric-field penetration into metals: Consequences for high-dielectric-constant capacitors. IEEE Trans. Electron Devices 46, 776 (1999).
52. M. Stengel and N.A. Spaldin: Origin of the dielectric dead layer in nanoscale capacitors. Nature 443, 679 (2006).
53. 2/Pt stack. Electrochem. Solid-State Lett. 10(8), G51 (2007).
54. 2/Pt structure. Nanotechnology 22, 254010 (2011).
55. 2 thin films. Appl. Phys. Lett. 86, 262907 (2005).
56. 2 thin films. Phys. Status Solidi RRL 4 (5-6), 112 (2010).
57. 2 thin film. Appl. Phys. Lett. 94, 122109 (2009).
58. 2 thin films. Appl. Phys. Lett. 91, 012907 (2007).
59. 2 thin films. Appl. Phys. Lett. 90, 242906 (2007).
60. K.M. Kim, D.S. Jeong, and C.S. Hwang: Nanofilamentary resistive switching in binary oxide system: A review on the present status and outlook. Nanotechnology 22, 254002 (2011).
61. 2/Pt structures. Nanotechnology 21, 305203 (2010).
62. 2/Pt cell. Nanotechnology 23, 185202 (2012).
63. J.J. Yang, M.D. Pickett, X. Li, D.A.A. Ohlberg, D.R. Stewart, and R.S. Williams: Memristive switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol. 3, 429 (2008).