Device simulation of charge collection and single-event upset

IEEE Transactions on Nuclear Science

Volumn 43, Issue 2 PART 1, 1996, Pages 561-575

  Dodd, Paul E ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED PARTICLES; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; IONIZATION; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES;

CHARGE COLLECTION; DEVICE MODELING TECHNIQUES; DYNAMIC RANDOM ACCESS MEMORIES; SINGLE EVENT UPSET; STATIC RANDOM ACCESS MEMORIES;

RADIATION EFFECTS;

EID: 0030128574     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.490901     Document Type: Article

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