Evaluation of SEGR Threshold in Power MOSFETs

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2160-2166

  Allenspach, M ^a   Brews, J R ^a   Mouret, I ^a   Schrimpf, R D ^a   Galloway, K F ^a  

^a UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; ENERGY TRANSFER; FAILURE ANALYSIS; IONS; RADIATION EFFECTS; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSIENTS; VOLTAGE CONTROL;

HOLE TRAPPING; SINGLE EVENT GATE RUPTURE;

MOSFET DEVICES;

EID: 0028721235     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340557     Document Type: Article

References (10)

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3. C.F. Wheatley and J.L. Titus, “Single Event Gate Rupture In Vertical Power MOSFETs; An Original Empirical Expression,” to be presented at the Nuclear Space and Radiation Effects Conference 1994.
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7. Sherra E. Kerns, “Transient-Ionization and Single-Event Phenomena,” Chapter 9, Section 9.1.1, Ionizing Radiation Effects in MOS Devices and Circuits, editors T.P. Ma, P.V. Dressendorfer, John Wiley & Sons, New York, 1989.
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