Numerical simulation of heavy ion charge generation and collection dynamics

IEEE Transactions on Nuclear Science

Volumn 40, Issue 6, 1993, Pages 1926-1934

  Dussault, H ^a,d   Howard, J W ^a   Block, R C ^a   Pinto, M R ^b   Stapor, W J ^c   Knudson, A R ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

^d Patrick Air Force Base   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; IONS; MATHEMATICAL MODELS; PRODUCT DESIGN; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; TRANSIENTS;

DEVICE TRANSIENT RESPONSE; HEAVY ION CHARGE COLLECTION; HEAVY ION CHARGE GENERATION; ION TRACK STRUCTURE; LINEAR ENERGY TRANSFER; SINGLE EVENT PHENOMENA;

NUCLEAR PHYSICS;

EID: 0027840202     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273462     Document Type: Article

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