SEU characterization of hardened CMOS SRAMs using statistical analysis of feedback delay in memory cells

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 2318-2323

  Kohler, Ross A ^a   Koga, Rocky ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL--RANDOM ACCESS; SEMICONDUCTING SILICON; STATISTICAL METHODS;

CMOS TECHNOLOGY; LINEAR ENERGY TRANSFERS; MEMORY CELLS; SINGLE EVENT UPSETS; STATIC RANDOM-ACCESS MEMORY;

INTEGRATED CIRCUITS;

EID: 0024942840     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45442     Document Type: Article

References (4)

1. R.A. Kushner, et al, “Fabrication and Total Dose Testing of a 256k×1 Radiation Hardened SRAM,” IEEE Trans. Nucl. Sci., Vol NS-35, No 6 Dec 1988
2. R.H. Arnold, et al, “Characterization of a High Speed 256k×1 Radiation Hard SRAM,” 1988 Government Microcircuit Application Conference
3. J.S. Fu, et al, “Scaling Studies of CMOS SRAM Soft Error Tolerances From 16k to 256k,” Proceedings IEDM, Dec 1987
4. E.L. Petersen, et al, “Suggested Single Event Upset Figure of Merit,” IEEE Trans. Nucl. Sci., Vol NS-30, No 6, p4533 Dec 1983