Effects of Process Parameter Distributions and Ion Strike Locations on SEU Cross-Section Data

IEEE Transactions on Nuclear Science

Volumn 40, Issue 6, 1993, Pages 1804-1811

  Massengill, L W ^a   Kerns, S E ^a   Alles, M L ^a,c  

^a VANDERBILT UNIVERSITY   (United States)

^b MOTOROLA INC   (United States)

^c Ibis Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; CMOS INTEGRATED CIRCUITS; GAIN MEASUREMENT; NUMERICAL ANALYSIS; SENSITIVITY ANALYSIS; SILICON ON INSULATOR TECHNOLOGY; STATISTICAL METHODS;

CRITICAL CHARGE; HARDENED MEMORY ARRAYS; LINEAR ENERGY TRANSFER; PARASITIC BIPOLAR GAIN DISTRIBUTIONS; PROCESS PARAMETER DISTRIBUTIONS; SINGLE EVENT UPSET CROSS SECTION DATA; STATIC RANDOM ACCESS MEMORIES; STOCHASTIC ION STRIKE LOCATIONS;

RANDOM ACCESS STORAGE;

EID: 0027810885     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273476     Document Type: Article

References (10)

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