Memory SEU Simulations Using 2-D Transport Calculations

IEEE Electron Device Letters

Volumn 6, Issue 8, 1985, Pages 422-424

  Fu, J S ^a   Axness, C L ^a   Weaver, H T ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL - RANDOM ACCESS; SEMICONDUCTOR DEVICES, MOS - TRANSPORT PROPERTIES; TRANSISTORS;

2-D TRANSPORT CALCULATIONS; CHANNEL DRAIN; COMPLEMENTARY MOS (CMOS); SINGLE EVENT UPSET (SEU) SIMULATION; STATIC RANDOM ACCESS MEMORY (SRAM);

DATA STORAGE UNITS;

EID: 0022102930     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1985.26177     Document Type: Article

References (7)

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