An approach to measure ultrafast-funneling-current transients

IEEE Transactions on Nuclear Science

Volumn 33, Issue 6, 1986, Pages 1651-1656

  Wagner, Ronald S ^a   Bradley, Jeffrey M ^a   Meggiore, Carl J ^a   Beery, Jerome G ^a   Hammond, Robert B ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038467182     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1986.4334658     Document Type: Article

References (9)

1. F. B. McLean and T. R. Oldham, “Charge Funneling in N and P-Type Substrates,” IEEE Transactions on Nuclear Science, Vol. NS-29, pp. 2018–2023, 1982.
2. G. C. Messenger. “Collection of Charge on Junction Nodes from Ion Tracks,” IEEE Transactions on Nuclear Science, Vol. NS-29, pp. 2024–2029, 1982.
3. Z. Schanfield, M. M. Moriwaki, W. H. Digby, and J. R. Srour, “Characteristics of SEU Current Transients and Collected Charge in GaAs and Si Devices,” IEEE Transactions on Nuclear Science, Vol. NS-32, 1985, pp. 4104–4109.
4. Chang-Ming Hsieh, Philip C. Murley, and Redmond R. O'Brien, “Collection of Charge from Alpha-Particle Particle Tracks in Silicon Devices,” IEEE Transactions on Electron Devices, Vol. ED-30, pp. 686–693, 1983.
5. James R. Andrews, “Precision Picosecond-Pulse Measurements Using a High-Quality Superconducting Delay Line,” IEEE Transactions on Instrumentation and Measurement, Vol. IM-23, pp. 468–472, 1974.
6. V. A. J. van Lint, T. M. Flanagan, R. E. Leadon, J. A. Naber, and V. C. Rogers, Mechanisms of Radiation Effects in Electronic Materials, Vol. I (Wiley, New York, 1980).
7. Joseph R. Srour and R. A. Hartmann, “Effects of single neutron interactions in silicon integrated circuits,” IEEE Trans. Nuc. Sci., NS-32, 1985, pp. 4195–4200.
8. E. Yamashita, K. Atsuki, and T. Ueda, “An Approximate Dispersion Formula of Microstrip Lines for Computer Aided Design of Microwave Integrated Circuits,” IEEE Trans. Microwave Theory Tech., Vol. MTT-27, pp 1036–1038, 1979.
9. D. R. Bowman, R. B. Hammond, and R. W. Dutton, “Polycrystalline-Silicon Integrated Photoconductors for Picosecond Pulsing and Gating,” IEEE Electron Device Letters, Vol. EDL-6, pp. 502–504, 1985.