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Volumn 42, Issue 6, 1995, Pages 1797-1802

See Results Using High Energy Ions

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS; IONS; MATHEMATICAL MODELS; RADIATION EFFECTS; SENSITIVITY ANALYSIS;

EID: 0029536512     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.488781     Document Type: Article
Times cited : (35)

References (11)
  • 1
    • 0000883655 scopus 로고
    • Applicability of LET to single events in microelectronic structures
    • M.A. Xapsos, “Applicability of LET to single events in microelectronic structures”, IEEE Trans. Nucl. Sci., NS-39, n°6, p. 1613, 1992.
    • (1992) IEEE Trans. Nucl. Sci. , vol.NS-39 , Issue.°6 , pp. 1613
    • Xapsos, M.A.1
  • 2
    • 0024173918 scopus 로고
    • Lateral charge transport from heavy-ion tracks in integrated circuit chips
    • J.A. Zoutendik, H.R. Schwartz, L.R. Nevill, “Lateral charge transport from heavy-ion tracks in integrated circuit chips”, IEEE Trans. Nucl. Sci., NS-35, n°6, p. 1644, 1988.
    • (1988) IEEE Trans. Nucl. Sci. , vol.NS-35 , Issue.°6 , pp. 1644
    • Zoutendik, J.A.1    Schwartz, H.R.2    Nevill, L.R.3
  • 4
    • 0028711775 scopus 로고
    • Space radiation evaluation of 16-Mbit DRAMs for mass memory applications
    • P. Calvel, P. Lamothe, C. Barillot, S. Duzellier, R. Ecoffet, “Space radiation evaluation of 16-Mbit DRAMs for mass memory applications”, IEEE Trans. Nucl. Sci., NS- 41, n°6, p. 2267, 1994.
    • (1994) IEEE Trans. Nucl. Sci. , vol.NS- 41 , Issue.°6 , pp. 2267
    • Calvel, P.1    Lamothe, P.2    Barillot, C.3    Duzellier, S.4    Ecoffet, R.5
  • 9
    • 0024169257 scopus 로고
    • Charge collection in silicon for ions of different energy but same linear energy transfer
    • W.J. Stapor & al., “Charge collection in silicon for ions of different energy but same linear energy transfer”, IEEE Trans. Nucl. Sci., NS-35, n°6, 1988.
    • (1988) IEEE Trans. Nucl. Sci. , vol.NS-35 , Issue.°6
    • Stapor, W.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.