Circuit Simulations of Alpha-Particle-Induced Soft Errors in MOS Dynamic RAM's

IEEE Journal of Solid-State Circuits

Volumn 16, Issue 1, 1981, Pages 31-34

  Mcpartland, Richard J ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS - RADIATION EFFECTS;

ALPHA PARTICLES; SOFT ERRORS;

DATA STORAGE, DIGITAL;

EID: 0019533799     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1981.1051532     Document Type: Article

References (7)

1. E. S. Meieran, P. R. Engel, and T. C. May, “Measurement of alpha particle radioactivity in IC device packages,” in Proc. 1979 Int. Reliabil. Phys. Symp., IEEE Catalog No. 79CH1425-8PHY, pp. 13–21.
2. T. C. May and M. H. Woods, “Alpha-particle-induced soft errors in dynamic memories,” IEEE Trans. Electron Devices, vol. ED-26, pp. 2–9, Jan. 1979.
3. D. S. Yaney, J. T. Nelson, and L. L. Vanskike, “Alpha-particle-tracks tracks in silicon and their effects on dynamic MOS RAM reliability,” IEEE Trans. Electron Devices, vol. ED-26, pp. 10–16, Jan. 1979.
4. R. P. Cenker et al., “A fault-tolerant 64K dynamic random access memory,” IEEE Trans. Electron Devices, vol. ED-26, pp. 853–860, 860, June 1979.
5. L. W. Nagel and D. O. Pederson, “Simulation program with integrated circuit emphasis,” in Proc. 16th Midwest Symp. Circuit Theory, Waterloo, Ont., Canada, 1973.
6. S. Kirkpatrick, “Modeling diffusion and collection of charge from ionizing radiation in silicon devices,” IEEE Trans. Electron Devices, vol. ED-26, pp. 1742–1753, Nov. 1979.
7. R. J. McPartland, J. T. Nelson, and W. R. Huber, “Alpha-particle-induced induced soft errors and 64K dynamic RAM design interaction,” in Proc. 1980 Int. Reliabil. Phys. Symp., 1980.