An improved single event resistive-hardening technique for CMOS static RAMS

IEEE Transactions on Nuclear Science

Volumn 33, Issue 6, 1986, Pages 1730-1733

  Johnson, Richard L ^a   Diehl, Sherra E ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84939067685     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1986.4334679     Document Type: Article

References (7)

1. A.E. Giddings, F.W. Hewlett, R.K. Treece, D.K. Nichols. L.S. Smith, and J.A. Zoutendyk, “Single Event Upset Immune Integrated Circuits For Project Galileo,” IEEE Trans. on Nucl. Sci., Vol. NS-32, No. 6, December 1985, pp. 4159–4163.
2. S.E. Diehl, A. Ochoa Jr, P.V. Dressendorfer, R. Koga, and W.A. Kolasinski, “Error Analysis and Prevention of Cosmic Ion-Induced Soft Errors in Static CMOS RAM's,” IEEE Trans. on Nucl. Sci., Vol NS-29, No. 6, December 1982, pp. 2032–2039.
3. J.L. Andrews, J.E. Schroeder, B.L. Gingerich, W.A. Kolasinski, R. Koga, and S.E. Diehl, “Single Event Error Immune CMOS RAM,” IEEE Trans. on Nucl. Sci., Vol NS-29, No 6, December 1982, pp. 2040–2043.
4. J.S. Browning, R. Koga, and W.A. KOlasinski, “Single Event Upset Rate Estimates For A 16K CMOS SRAMI,” IEEE Trans. on Nucl. Sci., Vol NS-32, No 6, December 1985, pp. 4133–4139.
5. T.M. Mnich, S.E. Diehl, B.D. Shafer, R. Koga, W.A. Kolasinski, and A. Ochoa, “Comparison of Analytical Models and Experimental Results for Single Event Upset In CMOS SRAMs,” IEEE Trans. on Nucl. Sci., Vol NS-30, No. 6, December 1983, pp. 4620–4623.
6. R.L. Johnson Jr, S.E. Diehl-Nagle, and J.R. Hauser “Simulation Approach For Modeling Single Event Upsets On Advanced CMOS SRAMS,” IEEE Trans. on Nucl Sci., Vol NS-32, No. 6, December 1985, pp. 4122–4127
7. T.R. Weatherford, J.R. Hauser, and S.E. Diehl, “Comparisons of Single Event Vulnerability of GaAs SRAMs,” IEEE Trans. on Nucl. Sci., Vol NS-33, No. 6, December 1986.