Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger-I

Solid State Electronics

Volumn 15, Issue 12, 1972, Pages 1371-1375

  Dannhauser F ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

EID: 0015491489     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(72)90131-1     Document Type: Article

References (21)

1. Turn-on Transient of p-n-p-n Triode †
2. Reverse recovery processes in silicon power rectifiers
3. Resistivity of Bulk Silicon and of Diffused Layers in Silicon
4. Carrier mobilities in silicon empirically related to doping and field