Investigation of single-event upset (SEU) in an advanced bipolar process

IEEE Transactions on Nuclear Science

Volumn 35, Issue 6, 1988, Pages 1573-1577

  Zoutendyk, John A ^a   Secrest, Elaine C ^a   Berndt, Dale F ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b HONEYWELL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTING SILICON;

SINGLE EVENT UPSETS; SOFTWARE PACKAGE PISCES; SOFTWARE PACKAGE SPICE;

INTEGRATED CIRCUITS;

EID: 0024168208     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25500     Document Type: Article

References (6)

1. A.R. Knudson and A.B. Campbell, “Charge collection in bipolar transistors,” IEEE Trans. Nucl. Sci., vol. NS-34, no. 6, pp. 1246–1250, Dec. 1987.
2. R.S. Wagner et al., “Transient measurements of ulirafast charge collection in semiconductor diodes,” IEEE Trans. Nucl. Sci., vol. NS-34, no. 6, pp. 1240–1245, Dec. 1987.
3. A. Peczalski, J. Bergman, and D. Berndt, “Physical SEU model for circuit simulations,” IEEE Trans. Nucl. Sci., vol. NS-35, no. 6, pp. 1591–1595, Dec. 1988 (this issue).
4. J.A. Zoutendyk, L.S. Smith, G.A. Soli, and R.Y. Lo, “Experimental evidence for a new single-event upset (SEU) mode in CMOS SRAM obtained from model verification,” IEEE Trans. Nucl. Sci., vol. NS-34, no. 6, pp. 1292–1299, Dec. 1987.
5. J.A. Zoutendyk, L.S. Smith, G.A. Soli, P. Thieberger, and H.E. Wegner, “Single-event upset (SEU) model verification and threshold determination using heavy ions in a bipolar static RAM,” IEEE Trans. Nucl. Sci., vol. NS-32, no. 6, pp. 4164–4169, Dec. 1985.
6. J.A. Zoutendyk, H.R. Schwartz, and L.R. Nevill, “Lateral charge transport from heavy-ion tracks in IC chips,” IEEE Trans. Nucl. Sci., vol. NS-35, no. 6, pp. 1644-1647, Dec. 1988 (this issue).