SEU characterization of a hardened CMOS 64K and 256K SRAM

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 2311-2317

  Sexton, F W ^a   Fu, J S ^a   Kohler, R A ^a,b   Koga, R ^a,c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DATA STORAGE, DIGITAL--RANDOM ACCESS; ION BEAMS; KRYPTON; XENON;

CMOS TECHNOLOGY; LINEAR ENERGY TRANSFER; PETERSEN APPROXIMATION; SINGLE EVENT UPSETS; STATIC RANDOM-ACCESS MEMORIES;

INTEGRATED CIRCUITS;

EID: 0024902710     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45441     Document Type: Article

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