The size effect of ion charge tracks on single event multiple-bit upset

IEEE Transactions on Nuclear Science

Volumn 34, Issue 6, 1987, Pages 1305-1309

  Martin, R C ^a   Ghoniem, N M ^a   Song, Y ^b   Cable, J S ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33644772262     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1987.4337470     Document Type: Article

References (13)

1. J. B. Blake and R. Mandel, IEEE Trans. Nucl. Sci., vol. NS-33, No. 6, pp. 1616–1619, Dec. 1986; and private communication with J. B. Blake.
2. R. J. Moore, “TDRSS SEU Operational Overview and Corrective Action,” presented at the 5th Annual Symposium on Single Event Effects, Los Angeles, CA, April 7–8, 1987.
3. H. L. Grubin, et al., IEEE Trans. Nucl. Sci., vol. NS-31, No. 6, pp. 1161–1166, Dec. 1984.
4. G. C. Messenger, IEEE Trans. Nucl. Sci., vol. NS-29, No. 6, pp. 2024–2031, Dec. 1982.
5. E. J. Kobetich and R. Katz, Phys. Rev., vol. 170, pp. 405–411, June 1968.
6. P. Chou and N. M. Ghoniem, J. Nucl. Mater., vol. 117, pp. 55–63, July 1983.
7. R. C. Martin and N. M. Ghoniem, “Coupled Ion-Electron Electron Transport in Semiconductors,” UCLA Report No. UCLA-ENG-8708/PPG-1024, March 1987.
8. H. J. Fitting and J. Reinhardt, Phys. Status Solidi A, vol. 88, pp. 245–259, March 1985.
9. A. Ya. Vyatskin and V. V. Trunev, Radiotekh. Elektron., vol. 12, No. 9, pp. 1636–1641, 1967.
10. C. J. Tung et al., “Inverse Mean Free Path, Stopping Power, CSDA Range, and Straggling in Silicon and Silicon Dioxide for Electrons of Energy ≤ 10 keV,” Report No. RADC-TR-76-125, April 1976.
11. C.-M. Hsieh, P. C. Murley, and R. R. O. Brien, IEEE Trans. Electron Devices, vol. ED-30, No. 6, pp. 686–693, June 1983.
12. A. L. Smirl, in Cohesive Properties of Semiconductors under Laser Irradiation, ed. L. D. Laude, The Hague: Martinus Nijhoff Publishers, 1983, pp. 348–390.
13. W. A. Kolasinski et al., IEEE Trans. Nucl. Sci., vol. NS-26, No. 6, pp. 5087–5091, Dec. 1979.