An seu tolerant memory cell derived from fundamental studies of seu mechanisms in sram

IEEE Transactions on Nuclear Science

Volumn 34, Issue 6, 1987, Pages 1281-1286

  Weaver, H T ^a   Axness, C L ^a   McBrayer, J D ^a   Browning, J S ^a   Fu, J S ^a   Ochoa, A O ^a   Koga, J R ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84939046223     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1987.4337466     Document Type: Article

References (14)

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2. H. T. Weaver, C. L. Axness, J. S. Fu, J. S. Binkley, J. Mansfield, “RAM cell recovery mechanisms following high energy ion strikes”, IEEE Electron Devices Lett., EDL-8, 7 (1987).
3. J. S. Fu, H. T. Weaver, R. Koga, and W. A. Kolasinski, “Comparison of 2D memory SEU transport simulation with experiments”, IEEE Trans. Nucl. Sci., NS-32, 4145 (1985).
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5. M. S. Mock, Analysis Mathematical Models of Semiconductor Devices, Boole Press, Dublin (1983)
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10. Sandia National Labs Patent Application, “T” Network Disclosure #S-62, 411 (SD4306), A. Ochoa, Jr., originator, Nov. 12, 1984.
11. R. L. Johnson, Jr. and S. E. Diehl, “An Improved Single Event Resistive-Hardened Technique for CMOS STATIC RAMS,” IEEE Trans. Nucl. Sci. NS-33, 1730 (1986).
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