Three-Dimensional Numerical Simulation of Single Event Upset of an SRAM Cell

IEEE Transactions on Nuclear Science

Volumn 40, Issue 6, 1993, Pages 1795-1803

  Woodruff, R L ^a   Rudeck, P J ^a  

^a U Technol Microelectronics Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; CODES (SYMBOLS); ELECTRIC NETWORK ANALYSIS; ELECTRON TRANSPORT PROPERTIES; ION BEAMS; MATHEMATICAL MODELS; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICE STRUCTURES; THREE DIMENSIONAL; TRANSISTORS;

ADVANCED APPLICATION MODULE; CHARGE COLLECTION MECHANISM; ELECTRON INJECTION; LINEAR ENERGY TRANSFER; RANDOM ACCESS STORAGE CELL; SINGLE EVENT UPSET;

MOS DEVICES;

EID: 0027850536     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273477     Document Type: Article

References (14)

1. A.B. Knudson, A.B. Campbell, “Comparison of Experimental Charge Collection Waveforms with PISCES Calculations,” IEEE Trans. Nucl. Sci NS-38, 1540, 1991
2. J.G.Rollins, T.K. Tsubota, W.A. Kolasinski, N.F. Haddad, L. Rockett, M. Cerilla, and W. Hennley, “Cost-Effective Numerical Simulations of SEU,” IEEE Trans. Nucl. Sci., NS-35, 1608, 1988
3. J.G. Rollins, J. Choma, and W.A. Kolasinski, “Single Event Upset in SOS Integrated Circuits,” IEEE Tran. Nucl. Sci., NS-34, 1713, 1987
4. J.A.Zoutendyk and E.C.Secrest, “Investigation of Single-Event Upset (SEU) in an Advanced Bipolar Process,” IEEE Tran. Nucl. Sci., NS-34, 1573, 1988
5. A.R. Knudson, A.B. Campbell, P. Shapiro, W.J. Stapor, E.A. Wolick, E.L. Peterson, S.E. Diehl-Nagle, J. Hauser, and P.V. Dressendorfer, “Charge Collection in Multilayer Structures,” IEEE Trans. Nucl. Sci., NS-31, 1149, 1984
6. A.R. Knudson, A.B. Campbell, J.R. Hauser, M.Jessee, W.J. Stapor, and P. Shapiro, “Charge Transport by the Ion Shunt Effect,” IEEE Trans. Nucl. Sci., NS-33, 1560, 1986
7. W.J. Stapor, P. T. McDonald, A.R. Knudson, A.B.Campbell, “Charge Collection in Silicon for Ions of Different Energy but Same Linear Energy Transfer (LET),“ IEEE Trans. Nucl. Sci., NS-35, 1585, 1988
8. P.J. McNulty, W.J. Beauvais, and D.R. Roth, “Determination of SEU Parameters of NMOS and CMOS SRAMs,” IEEE Trans. Nucl. Sci., NS-38, 1463, 1991
9. S.Buchner, K.Kang, W.Stapor, S.Rivet, “Spatial and Temporal Dependence of SEU in a 64k SRAM,” IEEE Tran Nucl. Sci., NS-39, 1630, 1992
10. DAVINCI Users Manual, Version 2.02, Technology Modeling Associates.
11. C-M. Hsieh, P.C. Marley, and R.R.O’Brien, “Collection of Charge from Alpha-Particle Tracks in Silicon Devices,” IEEE Trans on Elec. Dev., ED-30, 686, 1983
12. T.R.Oldham, F.B. McLean, “Charge Collection Measurements for Heavy Ions Incident on n- and p-Type Silicon,” IEEE Trans Nucl. Sci., NS-30, 4493, 1983
13. J.S.Fu, C.L.Axness, and H.T.Weaver, “Memory SEU Simulations Using 2-D Transport Calculations,” IEEE. Electron Device Letters, No. 8, 1985
14. C.L. Axness, H.T. Weaver, J.S.Fu, R.Koga, W.Kolasinski, “Mechanisms Leading to Single Event Upset,” IEEE Tran. Nucl. Sci. NS-33, 1577, 1986