The role of intercarrier scattering in excited silicon

Solid State Electronics

Volumn 27, Issue 6, 1984, Pages 565-572

  Grivitskas, V ^a   Willander, M ^a   Vaitkus, J ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

EID: 0021441915     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(84)90188-6     Document Type: Article

References (36)

1. Topics in applied physics
2. Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger—I
3. Investigation of non-equilibrium processes in semiconductors by the method of transient holograms
4. On the Temperature Dependence of Hole Mobility in Silicon
5. The optical (free-carrier) absorption of a hole-electron plasma in silicon
6. Carrier mobilities in silicon empirically related to doping and field
7. Impurity Doping Processes in Silicon