High energy heavyion-induced single event transients in epitaxial structures

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2018-2025

  Dussault, H ^a   Howard, J W ^a   Block, R C ^a   Pinto, M R ^b   Stapor, W J ^c   Knudson, A R ^d  

^a USAF   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

^d SFA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRIC CURRENTS; EPITAXIAL GROWTH; IONS; NUMERICAL ANALYSIS; RADIATION EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; TRANSIENTS;

CHARGE COLLECTION; EPITAXIAL LAYERS; HEAVY IONS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0028697026     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340537     Document Type: Article

References (19)

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