Single-Event-Induced Charge Collection and Direct Channel Conduction in Submicron MOSFETs

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2103-2111

  Velacheri, Sananda ^a   Massengill, Lloyd W ^a   Kerns, Sherra E ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; COMPUTER SOFTWARE; ELECTRIC CONDUCTIVITY OF SOLIDS; FAILURE ANALYSIS; GATES (TRANSISTOR); IONS; RADIATION EFFECTS; SEMICONDUCTOR DEVICE MODELS; THREE DIMENSIONAL;

ION HITS; ION TRIGGERED CHANNELING; SINGLE EVENT CHARGE COLLECTION; SUBMICRON SCALING;

MOSFET DEVICES;

EID: 0028714346     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340549     Document Type: Article

References (17)

1. Arnold Reisman, “Device, Circuit, and Technology Scaling to Micron and Submicron Dimensions”, Proceedings of the IEEE, Vol 71, No. 5, pp. 550–565, May 1983.
2. THUNDER is a registered trademark of Silvaco International.
3. Kit Man Cham, Soo-Young Oh, Daeje Chin, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Computer Aided Design and VLSI Device Development, pp 281–282, Kluwer Academic Publishers, 1988.
4. Masao Iwase et. al., “High-Performance 0.1-µm CMOS Devices Operating at Room Temperature”, IEEE Electron Device Letters, Vol.14, No.2, pp 51–53, February 1993.
5. K. Yamaguchi, “A Mobility Model for Carriers in the MOS Inversion Layer”, IEEE Transactions on Electron Devices, Vol ED-30, pp 658–663, 1983.
6. THUNDER User Manual, pp (2-20)-(2-21), Silvaco International, January 1993.
7. A. R. Knudson, A. B. Campbell, J. R. Hauser, M. Jessee, W. J. Stapor and P. Shapiro, “Charge transport by the ion shunt effect”, IEEE Transactions on Nuclear Science, Vol. NS33, No. 6, pp 1560–1564, December 1986.
8. J. R. Hauser, S. E. Diehl-Nagle, A. R. Knudson and A.B. Campbell, “Ion track shunt effects in multi-junction structures”, IEEE Transactions on Nuclear Science, Vol. NS32, No. 6, pp 4115–4121, December 1986.
9. C. M. Hsieh, P. C. Murley and R. R. O’Brien, “ A field funneling effect on the collection of alpha particle generated carriers in silicon devices”, IEEE Electron Device Letters, Vol EDL-2, No. 4, pp 103–105, April 1981.
10. C. Hu, “Alpha-particle induced field and enhanced collection of carriers”, IEEE Electron Device Letters, Vol. EDL-3, No. 2, pp 31–34, February 1982.
11. F. B. McLean and T.R. Oldham, “Charge funneling in n-and p+ Si substrates”, IEEE Transactions on Nuclear Science, Vol. NS29, No. 6, pp 2018–2023, December 1982.
12. W. J. Stapor, P. T. McDonald, A. R. Knudson, A. B. Campbell, B. G. Glagola, “Charge collection in silicon for ions of different energy but same linear energy transfer (LET)“, IEEE Transactions on Nuclear Science, Vol. NS35, No.6, pp 1585–1590, 1590, December 1988.
13. A. Ochoa Jr., F. W. Sexton, T. F. Wrobel, G. L. Hash and R. J. Sokel, “Snap Back: A stable regenerative breakdown mode of MOS devices”, IEEE Transactions on Nuclear Science, Vol. NS30, No.6, pp 4127–4130, December 1983.
14. R. L. Woodruff and P. J. Rudeck, “Three-Dimensional Numerical Simulation of Single Event Upset of an SRAM Cell”, IEEE Transactions on Nuclear Science, Vol. NS40, No.6, pp 1795–1803, December 1993.
15. T. R. Weatherford, D. McMorrow, W. R. Curtice, A. R. Knudson and A. B. Campbell, “Single Event Induced Charge Transport Modeling of G aAs MESFETs”, IEEE Transactions on Nuclear Science, Vol. NS40, No.6, pp 1867–1871, December 1993.
16. B. W. Hughlock, G. S. LaRue and A. H. Johnson, “Single-Event Event Upset in GaAs E/D MESFET Logic”, IEEE Transactions on Nuclear Science, Vol. 37, No.6, pp 1894–1901, December 1993.
17. R. M. Warner and B. L. Grung, Transistors, John Wiley and Sons, 1983.