Response of a DRAM to single-ion tracks of different heavy-ion species and stopping powers

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 1844-1848

  Zoutendyk, J A ^a   Smith, L S ^a   Edmonds, L D ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; ION BEAMS;

DYNAMIC RANDOM ACCESS MEMORIES; HEAVY IONS; STOPPING POWERS;

DATA STORAGE, DIGITAL;

EID: 0025624150     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101199     Document Type: Article

References (6)

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2. J. A. Zoutendyk, L. D. Edmonds, and L. S. Smith, “Characterization of Multiple-Bit Errors from Single-Ion Tracks in Integrated Circuits,” IEEE Trans. Nucl. Sci., Vol. 36, No. 6, pp. 2267–2274 (1989).
3. J. A. Zountendyk, L. S. Smith, G. A. Soli, P. Thieberger, and H. E. Wegner', “Single-Event Upset (SEU) Model Verification and Threshold Determination Using Heavy Ions in a Bipolar Static RAM,” IEEE Trans. Nucl. Sci, Vol. 32, No. 6, pp. 4164–4169 (1985).
4. E. J. Kobetich and R. Katz, “Energy Deposition by Electron Beams and δ Rays,” Phys. Rev., Vol. 170, No. 2, pp. 391–396 (1968).
5. R. C. Martin, N. M. Ghoniem, Y. Song, and J. S. Cable, “The Size Effect of Ion Charge Tracks on Single-Event Multiple-Bit Upset,” IEEE Trans. Nucl. Sci., Vol. 34, No. 6, pp. 1305–1309 (1987).
6. W. J. Stapor and P. T. McDonald, “Practical Approach to Ion Track Energy Distribution,” J. Appl. Phys., Vol. 64, No. 9, pp. 4430–4434 (1988).