Theoretical study of SEUs in 0.25-µ.m fully-depleted CMOS/SOI technology

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2297-2303

  Brisset, C ^a   Dollfus, P ^a   Hesto, P ^a   Musseau, O ^b   Leray, J L ^b  

^a CNRS   (France)

^b DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CELLULAR ARRAYS; ELECTRIC CURRENTS; ELECTRIC INVERTERS; ELECTRON TRANSPORT PROPERTIES; ENERGY TRANSFER; IONS; LOGIC DESIGN; MONTE CARLO METHODS; MOSFET DEVICES; RADIATION EFFECTS; SILICON ON INSULATOR TECHNOLOGY;

ION TRACK; LINEAR ENERGY TRANSFER; SINGLE EVENT UPSET;

CMOS INTEGRATED CIRCUITS;

EID: 0028727357     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340579     Document Type: Article

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