Heavy-ion track structure in silicon

IEEE Transactions on Nuclear Science

Volumn 26, Issue 6, 1979, Pages 4892-4895

  Hamm, R N ^a   Turner, J E ^a   Wright, H A ^a   Ritchie, R H ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETRY;

SEMICONDUCTING SILICON;

EID: 0018552951     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1979.4330246     Document Type: Article

References (10)

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4. R. N. Hamm et al., Proc. Fifth Symposium on Microdosimetry, Verbania Pallanza Italy, September 22–26, 1975, EUR 5452 d-e-f, p. 1037.
5. C. J. Tung et al., Inverse Mean Free Path, Stopping Power, CSDA Range, and Straggling in Silicon and Silicon Dioxide for Electrons of Energy <10 key. RADC-TR-76-125 (1976).
6. N. F. Mott and H. S. W. Massey, The Theory of Atomic Collisions (Clarendon Press, Oxford, 1965) 3rd ed., p. 463.
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8. M. C. Walae Phys. Rev. 101, 940 (1956).
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10. Cf., e.g., U. Fano, Ann. Rev. Nucl. Sci. 13 (1963).