Simulation approach for modeling single event upsets on advanced CMOS SRAMs†

IEEE Transactions on Nuclear Science

Volumn 32, Issue 6, 1985, Pages 4122-4127

  Johnson, Richard L ^a   Diehl Nagle, Sherra E ^a   Hauser, John R ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DATA STORAGE, DIGITAL - RANDOM ACCESS; SEMICONDUCTOR DEVICES, MOS;

SINGLE EVENT UPSETS;

INTEGRATED CIRCUITS;

EID: 77957246019     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1985.4334079     Document Type: Article

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