Two-dimensional simulation of single event induced bipolar current in CMOS structures

IEEE Transactions on Nuclear Science

Volumn 31, Issue 6, 1984, Pages 1155-1160

  Fu, J S ^a   Axness, C L ^a   Weaver, H T ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; TRANSISTORS - RADIATION EFFECTS;

BIPOLAR CURRENT; CMOS STRUCTURES; SINGLE-EVENT UPSETS; TWO-DIMENSIONAL SIMULATION;

INTEGRATED CIRCUITS;

EID: 0021594456     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1984.4333474     Document Type: Article

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