CMOS VLSI single event transient characterization

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 2287-2291

  Heileman, Steven J ^a   Eisenstadt, William R ^a   Fox, Robert M ^a   Wagner, Ronald S ^b   Bordes, Nicole ^b   Bradley, Jeffrey M ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DATA STORAGE, DIGITAL--RANDOM ACCESS; ION BEAMS; SEMICONDUCTOR DEVICES, MOS;

MULTIJUNCTION EFFECTS; PICOSECOND SINGLE EVENT TRANSIENTS;

INTEGRATED CIRCUITS, VLSI;

EID: 0024913731     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45437     Document Type: Article

References (11)

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