IIB-1 Three-Dimensional Numerical Modeling of Small-Size MOSFETs

IEEE Transactions on Electron Devices

Volumn 28, Issue 10, 1981, Pages 1215-1216

  Fichtner, W ^a   Johnston, R L ^a   Rose, D J ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84939052643     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1981.20526     Document Type: Article

References (5)

1. W. Fichtner, E. N. Fuls, R. L. Johnston, T. T. Sheng, and R. K. Watts, IEDM 1980, Washington, D.C., paper 2.2.
2. F. H. Gaensslen, IEDM 1977, Washington, D.C., paper 24.1.
3. E. M. Buturla, P. E. Cottrell, B. M. Grossman, K. A. Salsburg, M. B. Lawlor, and C. T. McMullen, ISSCC 1980, San Francisco, CA, paper WPM 7.4.
4. W. Fichtner and D. J. Rose, in Elliptic Problem Solvers, ed. M. Schultz, Academic Press, 1981.
5. G. W. Taylor and P. K. Chatterjee, 37th Device Research Conference, Boulder, CO, 1979.